IC 0.16µm BCD8s-SOI

IC STMicroelectronics 0.16µm BCD SOI High Voltage 4 ML BCD8s-SOI

TECHNOLOGY CHARACTERISTICS :

Temperature range: -40°C to +175°C
0.16µm Bipolar-CMOS-DMOS
4 metal layers (2 top metal options : Al or CuRDL)
Baseline 3.3V CMOS
Medium Voltage Module: 6V / 20V / 40V NMOS and PMOS
High Voltage Module: 70V / 100V / 140V / 200V NMOS and PMOS
Optional 2nd gate oxide for 1.8V CMOS
Dielectric Isolation on SOI
Available memory: OTP

DESIGN KIT VERSION :

TBD

Frontend Backend tools :

Cadence IC 6.1.6

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics)

Verification tools :

Calibre (Mentor Graphics)

Parasitics extraction tools :

StarRCXT (Synopsys)

LIBRARIES :

TBD

TURNAROUND TIME :

18-24 weeks (from GDS2 tape to packaged parts)