IC 0.16µm BCD8sP

IC STMicroelectronics 0.16µm BCD High Voltage 4 ML BCD8sP

TECHNOLOGY CHARACTERISTICS :

Temperature range: -40°C to +175°C
0.16µm Bipolar-CMOS-DMOS
4 metal layers (2 top metal options : Al or CuRDL)
Baseline 1.8V CMOS
Power devices: 10V / 18V / 27V / 42V / 60V
Dual gate oxide process: 1.8V CMOS, 5V CMOS & Power Devices
Optional DTI for lateral isolation

DESIGN KIT VERSION :

2.4

Frontend Backend tools :

Cadence IC 6.1.6

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics)

Verification tools :

Calibre (Mentor Graphics)

Parasitics extraction tools :

StarRCXT (Synopsys)

LIBRARIES :

Power devices (Power generator for specific needs available through CMP), Standard cells (1.8V), Pcells (bipolars, diodes, capacitors, resistors), Basic IOs (for 4 Metal Al option only 3.3V, 5V), Macrocell ESD, Antifuse (optional)

TURNAROUND TIME :

18-24 weeks (from GDS2 tape to packaged parts)