IC 0.35µm RF C35B4M3

IC ams 0.35µm CMOS RF 4 ML C35B4M3

TECHNOLOGY CHARACTERISTICS :

CMOS 0.35 C35B4M3
Same as C35B4C3 with Thick Metal module instead of Metal 4 module and with MIM capacitor module
Poly layer(s): 2, high resistive poly
Maximum die size: 2cm x 2cm
Usable cells: about 300 digital cells
Available I/O: I/O cell library with digital pads is available 3V, 3V/5V, 5V with internal level shifters
Temp. range: -40° C. / +125° C.
Supply voltage: 5V or 3.3V.

SPECIAL FEATURES :

High performance analog/digital/RF process ?

APPLICATION AREA :

Mixed signal analog digital, large digital designs, system on chip, RF.

DESIGN KIT VERSION :

4.10, 3.80

Frontend Backend tools :

Cadence IC 6.1.5 Cadence IC 5.1.41_USR6

Simulation tools :

Spectre, Hspice, Ultrasim, NC-Sim, ams-Designer (Cadence) Eldo, ModelSim, QuestaSim (Mentor Graphics) Hspice (Synopsys)

Verification tools :

Assura, PVS (Cadence) Calibre (Mentor Graphics)

Parasitics extraction tools :

QRC (Cadence) Calibre xRC (Mentor Graphics)

Place route tools :

Encounter Digital Implementation (EDI) (Cadence)

LIBRARIES :

LV Digital standard cells and IO Libraries: - CORELIB: General purpose digital library - CORELIB_3B: Same as CORELIB with 3 busses (VDD, VSS, GND) - IOLIB: IO pads (input, output, bidir). 3.3V and 5V available - IOLIBC_3B: Core limited digital IO Libraries - Core and IO cells are characterized for 1.8V, 2.2V, 2.7V, 3.3V. Analog standard cells Libraries: - IOLIB_ANA: Analog IO pads library - IOLIBC_ANA_3B: Core limited Analog IO pads library - IOLIB_ANA_HV: High Voltage Analog IO pads library - A_CELLS: Analog Library RF standard IO cells Libraries: - SPIRAL : Library with characterized Inductors - RF_PADS : RF IO pads library

TURNAROUND TIME :

10-12 weeks (from GDS2 tape to packaged parts)