IC 130nm H9SOI-FEM

IC STMicroelectronics 130nm Advanced CMOS SOI 4 ML H9SOI-FEM

TECHNOLOGY CHARACTERISTICS :

CMOS gate length: 130nm
SOI wafers with high resistive substrate 2.5V
Body Contacted CMOS
Floating Body CMOS 5.0V NLDMOS
PLDMOS 1.2V High Speed 130nm CMOSmeta
Temperature range: -40°C to 175°C
4 metal layers for interconnect
Ultra-thick Cu top metal (4.0 micron)
High Linearity MIM capacitor
Standard cell libraries.

DESIGN KIT VERSION :

14.1

Frontend Backend tools :

Cadence IC 6.1.6 Cadence IC 5.1.41_USR6

Simulation tools :

Spectre (Cadence), Eldo (Mentor Graphics),ADS GoldenGate (Keysight)

Verification tools :

Calibre (Mentor Graphics) PVS (Cadence)

Parasitics extraction tools :

Calibre xRC (Mentor Graphics), QRC (Cadence)

LIBRARIES :

Core: Libraries general purpose 2.5V, IO cells libraries: 1.8V, 2.5V, Digital and Analog pads, flip-chip pads, ESD kit cells.

TURNAROUND TIME :

Typical leadtime: 16-18 weeks from MPW run deadline to packaged parts