Silicon Photonic ICs Si310-PHMP2M

IC IRT Nanoelec/LETI-CEA Si-Photonics 2 ML Si310-PHMP2M

TECHNOLOGY CHARACTERISTICS :

  • 200mm SOI platform
  • SOI substrate HR BOX 800nm / Si 310nm
  • 2 metal layers
  • Tungsten plugs
  • Passive structures (mask layers DUV 193nm)
    • 300nm/165nm
    • Optional slab 65nm (Deep Rib)
    • Critical dimension on mask 120nm
    • 1D & 2D Grating couplers
  • Active structures
    • Lateral Ge PIN photodiode
    • MZ and RR Modulators
    • TiN Metal Heater Layer

Introduction to Silicon Photonic ICs Si310-PHMP2M video

SPECIAL FEATURES :

High performance active devices, friendly packaging by Tyndall Institute, technology compatible with IRT Nanoelec/LETI-CEA OPEN 3D Post-process

APPLICATION AREA :

Telecom, DataCom, ComputerCom

DESIGN KIT VERSION :

1.3

Frontend Backend tools :

Cadence IC 6.1.5, Mentor Graphics Pyxis 15.5.5, Phoenix Software (under development)

Simulation tools :

Eldo

Verification tools :

DRC calibre

TURNAROUND TIME :

Typical: 32 weeks